Identification of topmost atom on InP (001) surface by coaxial impact collision ion scattering spectroscopy
Identifieur interne : 000049 ( Main/Exploration ); précédent : 000048; suivant : 000050Identification of topmost atom on InP (001) surface by coaxial impact collision ion scattering spectroscopy
Auteurs : RBID : ISTEX:11664_1996_Article_BF02666521.pdfEnglish descriptors
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Abstract
The topmost atom of InP (001) surfaces, which were annealed at temperatures between 300 and 550°C or sputtered with 1 keV Ar+ at 300°C in ultra high vacuum, has been directly identified by means of coaxial impact collision ion scattering spectroscopy (CAICISS). Time-of-flight spectra of the annealed InP (001) surface exhibited both In and P peaks in both$$[\overline {\text{1}} {\text{ }}10]$$ azimuth and in [100] azimuth, which revealed that the topmost layer of annealed InP (001) was comprised of In-terminated and P-terminated surfaces. On the other hand, time-of-flight spectrum of the InP (001) sputtered at 300°C revealed only an In peak in$$[\overline {\text{1}} {\text{ }}10]$$ azimuth and revealed both In and P peaks in [100] azimuth. This result indicates that the topmost layer on the Ar+-sputtered InP (001) surface was completely terminated by In atoms. Furthermore, we indicate that surface damage induced by this sputtering treatment is little. The azimuthal depen-dence of CAICISS intensity scattered from In and P showed twofold symmetry with respect to [100] direction, which originated from the zinc-blende structure.
DOI: 10.1007/BF02666521
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<record><TEI><teiHeader><fileDesc><titleStmt><title>Identification of topmost atom on InP (001) surface by coaxial impact collision ion scattering spectroscopy</title><author><name>T. Nishihara</name><affiliation wicri:level="1"><mods:affiliation>Keihanna Research Laboratory, Shimadzu Corporation, Hikaridai 3-9, Seikacho, Sorakugun, 619-02, Kyoto, Japan</mods:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Keihanna Research Laboratory, Shimadzu Corporation, Hikaridai 3-9, Seikacho, Sorakugun, 619-02, Kyoto</wicri:regionArea><wicri:noRegion>Kyoto</wicri:noRegion></affiliation></author><author><name>M. Shinohara</name><affiliation wicri:level="1"><mods:affiliation>Keihanna Research Laboratory, Shimadzu Corporation, Hikaridai 3-9, Seikacho, Sorakugun, 619-02, Kyoto, Japan</mods:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Keihanna Research Laboratory, Shimadzu Corporation, Hikaridai 3-9, Seikacho, Sorakugun, 619-02, Kyoto</wicri:regionArea><wicri:noRegion>Kyoto</wicri:noRegion></affiliation></author><author><name>O. Ishiyama</name><affiliation wicri:level="1"><mods:affiliation>Keihanna Research Laboratory, Shimadzu Corporation, Hikaridai 3-9, Seikacho, Sorakugun, 619-02, Kyoto, Japan</mods:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Keihanna Research Laboratory, Shimadzu Corporation, Hikaridai 3-9, Seikacho, Sorakugun, 619-02, Kyoto</wicri:regionArea><wicri:noRegion>Kyoto</wicri:noRegion></affiliation></author><author><name>F. Ohtani</name><affiliation wicri:level="1"><mods:affiliation>Keihanna Research Laboratory, Shimadzu Corporation, Hikaridai 3-9, Seikacho, Sorakugun, 619-02, Kyoto, Japan</mods:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Keihanna Research Laboratory, Shimadzu Corporation, Hikaridai 3-9, Seikacho, Sorakugun, 619-02, Kyoto</wicri:regionArea><wicri:noRegion>Kyoto</wicri:noRegion></affiliation></author><author><name>M. Yoshimoto</name><affiliation wicri:level="1"><mods:affiliation>Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta 4259, Midoriku, 226, Yokohama, Japan</mods:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta 4259, Midoriku, 226, Yokohama</wicri:regionArea><wicri:noRegion>Yokohama</wicri:noRegion></affiliation></author><author><name>T. Maeda</name><affiliation wicri:level="1"><mods:affiliation>Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta 4259, Midoriku, 226, Yokohama, Japan</mods:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta 4259, Midoriku, 226, Yokohama</wicri:regionArea><wicri:noRegion>Yokohama</wicri:noRegion></affiliation></author><author><name>H. Koinuma</name><affiliation wicri:level="1"><mods:affiliation>Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta 4259, Midoriku, 226, Yokohama, Japan</mods:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta 4259, Midoriku, 226, Yokohama</wicri:regionArea><wicri:noRegion>Yokohama</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1996_Article_BF02666521.pdf</idno><date when="1996">1996</date><idno type="doi">10.1007/BF02666521</idno><idno type="wicri:Area/Main/Corpus">000203</idno><idno type="wicri:Area/Main/Curation">000203</idno><idno type="wicri:Area/Main/Exploration">000049</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ar sputtering</term><term>Coaxial impact collision ion scattering spectroscopy (CAICISS)</term><term>Indium phosphide</term><term>Ion scattering spectroscopy</term><term>Surface analysis</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The topmost atom of InP (001) surfaces, which were annealed at temperatures between 300 and 550°C or sputtered with 1 keV Ar+ at 300°C in ultra high vacuum, has been directly identified by means of coaxial impact collision ion scattering spectroscopy (CAICISS). Time-of-flight spectra of the annealed InP (001) surface exhibited both In and P peaks in both$$[\overline {\text{1}} {\text{ }}10]$$ azimuth and in [100] azimuth, which revealed that the topmost layer of annealed InP (001) was comprised of In-terminated and P-terminated surfaces. On the other hand, time-of-flight spectrum of the InP (001) sputtered at 300°C revealed only an In peak in$$[\overline {\text{1}} {\text{ }}10]$$ azimuth and revealed both In and P peaks in [100] azimuth. This result indicates that the topmost layer on the Ar+-sputtered InP (001) surface was completely terminated by In atoms. Furthermore, we indicate that surface damage induced by this sputtering treatment is little. The azimuthal depen-dence of CAICISS intensity scattered from In and P showed twofold symmetry with respect to [100] direction, which originated from the zinc-blende structure.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="225d53acc99259c75a5e1c2e2612c2c04d67ceb0"><titleInfo lang="eng"><title>Identification of topmost atom on InP (001) surface by coaxial impact collision ion scattering spectroscopy</title></titleInfo><name type="personal"><namePart type="given">T.</namePart><namePart type="family">Nishihara</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Keihanna Research Laboratory, Shimadzu Corporation, Hikaridai 3-9, Seikacho, Sorakugun, 619-02, Kyoto, Japan</affiliation></name><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Shinohara</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Keihanna Research Laboratory, Shimadzu Corporation, Hikaridai 3-9, Seikacho, Sorakugun, 619-02, Kyoto, Japan</affiliation></name><name type="personal"><namePart type="given">O.</namePart><namePart type="family">Ishiyama</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Keihanna Research Laboratory, Shimadzu Corporation, Hikaridai 3-9, Seikacho, Sorakugun, 619-02, Kyoto, Japan</affiliation></name><name type="personal"><namePart type="given">F.</namePart><namePart type="family">Ohtani</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Keihanna Research Laboratory, Shimadzu Corporation, Hikaridai 3-9, Seikacho, Sorakugun, 619-02, Kyoto, Japan</affiliation></name><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Yoshimoto</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta 4259, Midoriku, 226, Yokohama, Japan</affiliation></name><name type="personal"><namePart type="given">T.</namePart><namePart type="family">Maeda</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta 4259, Midoriku, 226, Yokohama, Japan</affiliation></name><name type="personal"><namePart type="given">H.</namePart><namePart type="family">Koinuma</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta 4259, Midoriku, 226, Yokohama, Japan</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1995-06-19</dateCreated><dateValid encoding="w3cdtf">2007-07-01</dateValid><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">The topmost atom of InP (001) surfaces, which were annealed at temperatures between 300 and 550°C or sputtered with 1 keV Ar+ at 300°C in ultra high vacuum, has been directly identified by means of coaxial impact collision ion scattering spectroscopy (CAICISS). Time-of-flight spectra of the annealed InP (001) surface exhibited both In and P peaks in both$$[\overline {\text{1}} {\text{ }}10]$$ azimuth and in [100] azimuth, which revealed that the topmost layer of annealed InP (001) was comprised of In-terminated and P-terminated surfaces. On the other hand, time-of-flight spectrum of the InP (001) sputtered at 300°C revealed only an In peak in$$[\overline {\text{1}} {\text{ }}10]$$ azimuth and revealed both In and P peaks in [100] azimuth. This result indicates that the topmost layer on the Ar+-sputtered InP (001) surface was completely terminated by In atoms. Furthermore, we indicate that surface damage induced by this sputtering treatment is little. The azimuthal depen-dence of CAICISS intensity scattered from In and P showed twofold symmetry with respect to [100] direction, which originated from the zinc-blende structure.</abstract><subject lang="eng"><genre>Key words</genre><topic>Ar sputtering</topic><topic>coaxial impact collision ion scattering spectroscopy (CAICISS)</topic><topic>indium phosphide</topic><topic>ion scattering spectroscopy</topic><topic>surface analysis</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1996</partNumber><partNumber>Volume: 25</partNumber><partNumber>Number: 5</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1996-05-01</dateIssued><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 39</identifier><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1996</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02666521</identifier><identifier type="matrixNumber">Art21</identifier><identifier type="local">BF02666521</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>667</start><end>670</end></extent></part><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1996</recordOrigin><recordIdentifier>11664_1996_Article_BF02666521.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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